VEC2616-TL-W 数据手册
其他文档
VEC2616 7 pages
技术规格
- RoHS: true
- Type: 1PCSN-Channel&1PCSP-Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: onsemi VEC2616-TL-W
- Operating Temperature: +150°C@(Tj)
- Power Dissipation (Pd): 900mW
- Total Gate Charge (Qg@Vgs): 10nC@10V
- Drain Source Voltage (Vdss): 60V
- Input Capacitance (Ciss@Vds): 505pF@20V
- Continuous Drain Current (Id): -
- Gate Threshold Voltage (Vgs(th)@Id): 2.6V@1mA
- Reverse Transfer Capacitance (Crss@Vds): 37pF@20V
- Drain Source On Resistance (RDS(on)@Vgs,Id): 62mΩ@10V,1.5A
- Package: SOT-28FL
- Manufacturer: onsemi
- Series: -
- Packaging: Cut Tape (CT)
- Part Status: Active
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate, 4V Drive
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A
- Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V
- Power - Max: 1W
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: SOT-28FL/VEC8
- Base Part Number: VEC2616
- detail: Mosfet Array N and P-Channel 60V 3A, 2.5A 1W Surface Mount SOT-28FL/VEC8