دیتاشیت VEC2616-TL-W
مشخصات دیتاشیت
| نام دیتاشیت |
VEC2616
|
| حجم فایل |
1103.434
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
7
|
مشخصات
-
RoHS:
true
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Type:
1PCSN-Channel&1PCSP-Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi VEC2616-TL-W
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Operating Temperature:
+150°C@(Tj)
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Power Dissipation (Pd):
900mW
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Total Gate Charge (Qg@Vgs):
10nC@10V
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Drain Source Voltage (Vdss):
60V
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Input Capacitance (Ciss@Vds):
505pF@20V
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Continuous Drain Current (Id):
-
-
Gate Threshold Voltage (Vgs(th)@Id):
2.6V@1mA
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Reverse Transfer Capacitance (Crss@Vds):
37pF@20V
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Drain Source On Resistance (RDS(on)@Vgs,Id):
62mΩ@10V,1.5A
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Package:
SOT-28FL
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
N and P-Channel
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FET Feature:
Logic Level Gate, 4V Drive
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Drain to Source Voltage (Vdss):
60V
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Current - Continuous Drain (Id) @ 25°C:
3A, 2.5A
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Rds On (Max) @ Id, Vgs:
80mOhm @ 1.5A, 10V
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Vgs(th) (Max) @ Id:
2.6V @ 1mA
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Gate Charge (Qg) (Max) @ Vgs:
10nC @ 10V
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Input Capacitance (Ciss) (Max) @ Vds:
505pF @ 20V
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Power - Max:
1W
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Mounting Type:
Surface Mount
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Package / Case:
8-SMD, Flat Lead
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Supplier Device Package:
SOT-28FL/VEC8
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Base Part Number:
VEC2616
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detail:
Mosfet Array N and P-Channel 60V 3A, 2.5A 1W Surface Mount SOT-28FL/VEC8
